A sub-threshold MOS based pseudo resistor featuring a very high value and ultra-low distortion is proposed. A band-pass neural amplifier with a very low high-pass cutoff frequency is designed, to demonstrate the linearity of the proposed resistor. A BJT less CTAT current generator has been introduced to minimize the temperature drift of the resistor and make tuning easier. The stand-alone resistor has achieved 0.5% better linearity and a 12% improved temperature coefficient over the existing architectures. A neural amplifier has been designed with the proposed resistor as a feedback element. It demonstrated 31dB mid-band gain and a lowpass cutoff frequency of 0.85Hz. The circuit operates from a 1V supply and draws 950nA current at room temperature.
Nagulapalli, RajasekharHayatleh, KhaledBarker, Steve
Georgiou, P.Lidgey, F.J.
Faculty of Technology, Design and Environment\School of Engineering, Computing and Mathematics
Year of publication: 2018Date of RADAR deposit: 2019-08-01