Journal Article

A 0.55V Bandgap reference with a 59ppm/0c Temperature coefficient

Abstract

This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with existing BJT-based reference circuits, by using a MOS transistor operating in subthreshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55V, and generates a 286mV reference voltage with a temperature coefficient of 59ppm/°C. The circuit takes 413nA current from 0.55V supply and occupies 0.00986mm2 of active area

Attached files

Authors

Nagulapalli, Rajasekhar
Hayatleh, Khaled
Barker, Steve
Tammam, Amr Abdallah
Georgiou, P.
Lidgey, Francis John

Oxford Brookes departments

Faculty of Technology, Design and Environment\School of Engineering, Computing and Mathematics

Dates

Year of publication: 2018
Date of RADAR deposit: 2018-07-30

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License

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Related resources

This RADAR resource is the Accepted Manuscript of A 0.55V Bandgap reference with a 59ppm/0c Temperature coefficient