Conference Paper


A Single BJT 10.2 ppm/0C Bandgap Reference in 45nm CMOS Technology

Abstract

Bandgap reference using 2 BJT devices are well explored in the literature. Usually, less number of BJT's would reduce the cost of the chip in modern CMOS technologies. A single BJT based reference was discussed here. V BE of the BJT has been used as CTAT voltage and a CMOS differential pair offset voltage based PTAT generation circuit used to generate zero temp coefficient reference. A prototype was developed in 45nm TSMC CMOS technology and post-layout simulationswere performed. Designed for a nominal voltage of 525mV with 10.2ppm/°C temperature coefficient. Its supply sensitivity is 0.4% and works with 1V power supply. The proposed solution consumes 51.8μW power from 1V power supply and occupies 2478 μm2 silicon area.

Attached files

Authors

Nagulapalli, Rajasekhar
Hayatleh, Khaled
Barker, Steve

Oxford Brookes departments

School of Engineering, Computing and Mathematics

Dates

Year of publication: 2020
Date of RADAR deposit: 2020-10-27



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This RADAR resource is the Accepted Manuscript of A Single BJT 10.2 ppm/0C Bandgap Reference in 45nm CMOS Technology

Details

  • Owner: Daniel Croft
  • Collection: Outputs
  • Version: 1 (show all)
  • Status: Live