Traditional BGR circuits require a 1.05V supply due to the VBE of the BJT. Deep submicron CMOS technologies are limiting the supply voltage to less than 940mV. Hence there is a strong motivation to design them at lower supply voltages. The supply voltage limitation in conventional BGR is described qualitatively in this paper. Further, a current mirror-assisted technique has been proposed to enable BGR operational at 0.82V supply. A prototype was developed in 65nm TSMC
CMOS technology and post-layout simulation results were performed. A self-bias opamp has been exploited to minimize the systematic offset. Proposed BGR targeted at 450mV works
from 0.82-1.05V supply without having any degradation in the performance while keeping the integrated noise of 15.2µV and accuracy of 23.4ppm/0C. Further, the circuit consumes 21µW
of power and occupies 73*32µm2 silicon area.
Nagulapalli, R.Hayatleh, KhaledYassine, Nabil
School of Engineering, Computing and Mathematics
Year of publication: 2021Date of RADAR deposit: 2021-05-11
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